Microelectronics Journal

SCI SCIE

国际简称：MICROELECTRON J 参考译名：微电子杂志

主要研究方向：工程技术-工程：电子与电气非预警期刊审稿周期：约3.0个月

《微电子杂志》(Microelectronics Journal)是一本由Elsevier出版的以工程技术-工程：电子与电气为研究特色的国际期刊，发表该领域相关的原创研究文章、评论文章和综述文章，及时报道该领域相关理论、实践和应用学科的最新发现，旨在促进该学科领域科学信息的快速交流。该期刊是一本未开放期刊，近三年没有被列入预警名单。

3区中科院分区
Q3 JCR分区
386 年发文量
2.2 IF影响因子
未开放 是否OA
59 H-index
1967 创刊年份
Monthly 出版周期
English 出版语言

Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.

The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc.

Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.

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Microelectronics Journal期刊信息

ISSN：0026-2692
出版语言：English
是否OA：未开放
E-ISSN：1879-2391
出版地区：ENGLAND
是否预警：否
出版商：Elsevier
出版周期：Monthly
创刊时间：1967
开源占比：0.0103
Gold OA文章占比：5.14%
OA被引用占比：
出版国人文章占比：0
出版撤稿占比：
研究类文章占比：100.00%

Microelectronics Journal CiteScore评价数据（2026年6月最新版）

CiteScore

SJR

SNIP

CiteScore 指数

4.2

0.387

0.853

学科类别	分区	排名	百分位
大类：Engineering 小类：Electrical and Electronic Engineering	Q2	379 / 1030	63%
大类：Engineering 小类：Condensed Matter Physics	Q2	195 / 446	56%
大类：Engineering 小类：Atomic and Molecular Physics, and Optics	Q2	108 / 243	55%
大类：Engineering 小类：Surfaces, Coatings and Films	Q2	64 / 141	54%
大类：Engineering 小类：Electronic, Optical and Magnetic Materials	Q2	154 / 318	51%

名词解释：CiteScore 是衡量期刊所发表文献的平均受引用次数，是在 Scopus 中衡量期刊影响力的另一个指标。当年CiteScore 的计算依据是期刊最近4年（含计算年度）的被引次数除以该期刊近四年发表的文献数。例如，2022年的 CiteScore 计算方法为：2022年的 CiteScore =2019-2022年收到的对2019-2022年发表的文件的引用数量÷2019-2022年发布的文献数量注：文献类型包括：文章、评论、会议论文、书籍章节和数据论文。

Microelectronics Journal中科院评价数据

《新锐期刊分区表》（2026年3月发布）

Top期刊	综述期刊	大类学科		小类学科
否	否	工程技术	3区	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气 NANOSCIENCE & NANOTECHNOLOGY 纳米科技	3区 3区

Microelectronics Journal JCR评价数据

2025-2026年最新版

按JCI指标学科分区	收录子集	分区	排名	百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	229 / 369	38.1
学科：NANOSCIENCE & NANOTECHNOLOGY	SCIE	Q4	120 / 148	19.3
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q3	250 / 371	32.75
学科：NANOSCIENCE & NANOTECHNOLOGY	SCIE	Q3	104 / 148	30.07

Microelectronics Journal历年数据统计

影响因子

中科院分区

Microelectronics Journal中国学者发文选摘

1、A wideband low-phase-noise VCO with low-coupled 8-shaped inducto
Author: Zou, Wei; Li, Pengcheng; Yao, Jingyun; Liu, Haiyang; Cheng, Zhengwang; Wang, Mei; Zhang, Li; Pan, Minghu; Zou, Xuecheng

Journal: MICROELECTRONICS JOURNAL. 2026; Vol. 174, Issue , pp. -. DOI: 10.1016/j.mejo.2026.107221
2、Deep cryogenic high dynamic range readout circuit for short-wave infrared focal plane array
Author: Qiao, Jun; Wang, Xiao; Nie, Kaiming; Li, Peng; Wang, Kunhao; Xu, Jiangtao

Journal: MICROELECTRONICS JOURNAL. 2026; Vol. 174, Issue , pp. -. DOI: 10.1016/j.mejo.2026.107219
3、CNM-MNPO: A Compute-Near-Memory FPGA architecture with a mesh NoC placement optimizatio
Author: Li, Yonggen; Kumar, Akash; Shen, Haibin; Huang, Kejie

Journal: MICROELECTRONICS JOURNAL. 2026; Vol. 174, Issue , pp. -. DOI: 10.1016/j.mejo.2026.107222
4、End-to-end ADC digital calibration via multi-output compression-recovery networ
Author: Li, Jiashen; Deng, Honghui; Li, Long; Wu, Luotian; Li, Muqi; Yang, Xiao; Yin, Yongsheng

Journal: MICROELECTRONICS JOURNAL. 2026; Vol. 174, Issue , pp. -. DOI: 10.1016/j.mejo.2026.107210
5、A compact 26.5-29.5 GHz high-gain power amplifier based on an interleaved topology in 40-nm CMO
Author: Du, Jiancong; Tang, Jiani; Li, Zhiqun; Li, Qin

Journal: MICROELECTRONICS JOURNAL. 2026; Vol. 174, Issue , pp. -. DOI: 10.1016/j.mejo.2026.107217
6、A 60V chopper amplifier achieving 3 μV VOS with adaptive input bias current compensatio
Author: Feng, Jingbin; Zhou, Shanshan; Hou, Peiru; Qu, Pengda; Zhao, Yue; Xiao, Zhiming

Journal: MICROELECTRONICS JOURNAL. 2026; Vol. 174, Issue , pp. -. DOI: 10.1016/j.mejo.2026.107199
7、A 200-MS/s 12-b synchronous SAR ADC with low noise comparator in 28-nm CMO
Author: Wu, Xiuheng; Zhang, Yuzhen; Guo, Xuan; Jiang, Zilin; Luo, Jiahui; Bai, Yun; Liu, Xinyu

Journal: MICROELECTRONICS JOURNAL. 2026; Vol. 174, Issue , pp. -. DOI: 10.1016/j.mejo.2026.107204
8、A 10-bit 50-MS/s SAR ADC employing PN-assisted LMS calibration and robust register logic achieving 78.4-dB SFD
Author: Yang, Xijun; Men, Siqi; Shi, Yuzhuan; Sun, Jie

Journal: MICROELECTRONICS JOURNAL. 2026; Vol. 174, Issue , pp. -. DOI: 10.1016/j.mejo.2026.107200