Microelectronic Engineering

SCI SCIE

国际简称：MICROELECTRON ENG 参考译名：微电子工程

主要研究方向：工程技术-工程：电子与电气非预警期刊审稿周期：约6.0个月

《微电子工程》(Microelectronic Engineering)是一本由Elsevier出版的以工程技术-工程：电子与电气为研究特色的国际期刊，发表该领域相关的原创研究文章、评论文章和综述文章，及时报道该领域相关理论、实践和应用学科的最新发现，旨在促进该学科领域科学信息的快速交流。该期刊是一本未开放期刊，近三年没有被列入预警名单。

3区中科院分区
Q2 JCR分区
85 年发文量
3.3 IF影响因子
未开放 是否OA
89 H-index
1983 创刊年份
Monthly 出版周期
English 出版语言

Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.

[ 查看全部 ]

投稿咨询加急咨询

Microelectronic Engineering期刊信息

ISSN：0167-9317
出版语言：English
是否OA：未开放
E-ISSN：1873-5568
出版地区：NETHERLANDS
是否预警：否
出版商：Elsevier
出版周期：Monthly
创刊时间：1983
开源占比：0.0341
Gold OA文章占比：19.05%
OA被引用占比：
出版国人文章占比：0
出版撤稿占比：
研究类文章占比：89.41%

Microelectronic Engineering CiteScore评价数据（2026年6月最新版）

CiteScore

SJR

SNIP

CiteScore 指数

7.4

0.595

1.076

学科类别	分区	排名	百分位
大类：Physics and Astronomy 小类：Condensed Matter Physics	Q1	78 / 446	82%
大类：Physics and Astronomy 小类：Electrical and Electronic Engineering	Q1	188 / 1030	81%
大类：Physics and Astronomy 小类：Atomic and Molecular Physics, and Optics	Q1	47 / 243	80%
大类：Physics and Astronomy 小类：Surfaces, Coatings and Films	Q1	30 / 141	79%
大类：Physics and Astronomy 小类：Electronic, Optical and Magnetic Materials	Q1	68 / 318	78%

名词解释：CiteScore 是衡量期刊所发表文献的平均受引用次数，是在 Scopus 中衡量期刊影响力的另一个指标。当年CiteScore 的计算依据是期刊最近4年（含计算年度）的被引次数除以该期刊近四年发表的文献数。例如，2022年的 CiteScore 计算方法为：2022年的 CiteScore =2019-2022年收到的对2019-2022年发表的文件的引用数量÷2019-2022年发布的文献数量注：文献类型包括：文章、评论、会议论文、书籍章节和数据论文。

Microelectronic Engineering中科院评价数据

《新锐期刊分区表》（2026年3月发布）

Top期刊	综述期刊	大类学科		小类学科
否	否	工程技术	3区	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气 NANOSCIENCE & NANOTECHNOLOGY 纳米科技 OPTICS 光学 PHYSICS, APPLIED 物理：应用	3区 3区 3区 3区

Microelectronic Engineering JCR评价数据

2025-2026年最新版

按JCI指标学科分区	收录子集	分区	排名	百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q2	156 / 369	57.9
学科：NANOSCIENCE & NANOTECHNOLOGY	SCIE	Q3	94 / 148	36.8
学科：OPTICS	SCIE	Q2	47 / 129	64
学科：PHYSICS, APPLIED	SCIE	Q2	83 / 191	56.8
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q2	176 / 371	52.7
学科：NANOSCIENCE & NANOTECHNOLOGY	SCIE	Q3	77 / 148	48.31
学科：OPTICS	SCIE	Q3	65 / 129	50
学科：PHYSICS, APPLIED	SCIE	Q2	81 / 191	57.85

Microelectronic Engineering历年数据统计

影响因子

中科院分区

Microelectronic Engineering中国学者发文选摘

1、Reconfigurable ferroelectric GAAFET architectures for advanced logic circuit
Author: Xu, Chenhao; Wang, Zhibin; Chen, Shuxin; Wang, Wunan; Zhu, Kaichen; Wu, Fan; Li, Wenwu

Journal: MICROELECTRONIC ENGINEERING. 2026; Vol. 305, Issue , pp. -. DOI: 10.1016/j.mee.2026.112468
2、Readout scheme in analog computing-in-memory: Review of design principles and recent progres
Author: Zhang, Shizeng; Huang, Pingyang; You, Haitao; Wu, Xinyu; Chen, Wei; Zhang, Li; Cui, Qiang

Journal: MICROELECTRONIC ENGINEERING. 2026; Vol. 305, Issue , pp. -. DOI: 10.1016/j.mee.2026.112466
3、Overclocking-tolerant and all on-chip CIM processor for energy-efficient edge lightweight AI inference through custom SOT-MRAM and algorithm-circuit synerg
Author: Jiang, Xinpeng; Sun, Sifan; Li, Shaoyi; Zhang, Tuo; Yu, Anyang; Liu, Sijia; Li, Haonan; Sun, Chengyuan; Liu, Hongxi; Li, Xuan; Jin, Hui; Cao, Kaihua; Wang, Zhaohao; Zhang, He; Zhao, Weisheng

Journal: MICROELECTRONIC ENGINEERING. 2026; Vol. 305, Issue , pp. -. DOI: 10.1016/j.mee.2026.112467
4、Tailoring Ga2O3 for solar-blind UV photodetectors: A comprehensive review of materials, techniques, and application
Author: Long, Guanhao; Zhu, Mingqiang; Deng, Tao

Journal: MICROELECTRONIC ENGINEERING. 2026; Vol. 305, Issue , pp. -. DOI: 10.1016/j.mee.2026.112456
5、Multi-threshold reservoir computing system for high-efficiency temporal signal processin
Author: Luo, Yi-Qing; Xu, Zheng-Wei; Xu, Jian-Long; Gao, Xu; Zhong, Ya-Nan; Wang, Sui-Dong

Journal: MICROELECTRONIC ENGINEERING. 2026; Vol. 305, Issue , pp. -. DOI: 10.1016/j.mee.2026.112465
6、Proposal of a compact plasmonic structure for implementing all-optical logic gates in the C-ban
Author: Yan, Cai; Afshari-Bavil, Mehdi; Rezaei, Mir Hamid

Journal: MICROELECTRONIC ENGINEERING. 2026; Vol. 304, Issue , pp. -. DOI: 10.1016/j.mee.2026.112454
7、An electromagnetic study of scalability of Si3N4 optical waveguides for 3D nanophotonic integration with CMOS electronics in AI er
Author: Zhou, Wenli; Yao, Rui (Ray); Lam, Sang

Journal: MICROELECTRONIC ENGINEERING. 2026; Vol. 304, Issue , pp. -. DOI: 10.1016/j.mee.2025.112440
8、A product qualification vehicle (PQV) for accelerated yield learning and efficient fault isolation in 28 nm HKMG technologies by capturing LDE and BEOL weak pattern
Author: Cai, Enjing; Zhou, Limin; Chen, Qiang; Zhang, David Wei; Sun, Qingqing; Zhu, Hao

Journal: MICROELECTRONIC ENGINEERING. 2026; Vol. 304, Issue , pp. -. DOI: 10.1016/j.mee.2026.112452