Ieee Transactions On Electron Devices

SCI SCIE

国际简称：IEEE T ELECTRON DEV 参考译名：IEEE Transactions On Electron Devices

主要研究方向：工程技术-工程：电子与电气非预警期刊审稿周期：约4.7个月

《IEEE Transactions On Electron Devices》(Ieee Transactions On Electron Devices)是一本由Institute of Electrical and Electronics Engineers Inc.出版的以工程技术-工程：电子与电气为研究特色的国际期刊，发表该领域相关的原创研究文章、评论文章和综述文章，及时报道该领域相关理论、实践和应用学科的最新发现，旨在促进该学科领域科学信息的快速交流。该期刊是一本未开放期刊，近三年没有被列入预警名单。

3区中科院分区
Q2 JCR分区
1015 年发文量
3.6 IF影响因子
未开放 是否OA
165 H-index
1954 创刊年份
Monthly 出版周期
English 出版语言

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.

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Ieee Transactions On Electron Devices期刊信息

ISSN：0018-9383
出版语言：English
是否OA：未开放
E-ISSN：1557-9646
出版地区：UNITED STATES
是否预警：否
出版商：Institute of Electrical and Electronics Engineers Inc.
出版周期：Monthly
创刊时间：1954
开源占比：0.0674
Gold OA文章占比：3.41%
OA被引用占比：
出版国人文章占比：0
出版撤稿占比：
研究类文章占比：99.61%

Ieee Transactions On Electron Devices CiteScore评价数据（2026年6月最新版）

CiteScore

SJR

SNIP

CiteScore 指数

6.5

0.809

1.398

学科类别	分区	排名	百分位
大类：Engineering 小类：Electrical and Electronic Engineering	Q1	235 / 1030	77%
大类：Engineering 小类：Electronic, Optical and Magnetic Materials	Q2	82 / 318	74%

名词解释：CiteScore 是衡量期刊所发表文献的平均受引用次数，是在 Scopus 中衡量期刊影响力的另一个指标。当年CiteScore 的计算依据是期刊最近4年（含计算年度）的被引次数除以该期刊近四年发表的文献数。例如，2022年的 CiteScore 计算方法为：2022年的 CiteScore =2019-2022年收到的对2019-2022年发表的文件的引用数量÷2019-2022年发布的文献数量注：文献类型包括：文章、评论、会议论文、书籍章节和数据论文。

Ieee Transactions On Electron Devices中科院评价数据

《新锐期刊分区表》（2026年3月发布）

Top期刊	综述期刊	大类学科		小类学科
否	否	工程技术	3区	ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气 PHYSICS, APPLIED 物理：应用	3区 3区

Ieee Transactions On Electron Devices JCR评价数据

2025-2026年最新版

按JCI指标学科分区	收录子集	分区	排名	百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q2	142 / 369	61.7
学科：PHYSICS, APPLIED	SCIE	Q2	72 / 191	62.6
学科：ENGINEERING, ELECTRICAL & ELECTRONIC	SCIE	Q2	150 / 371	59.7
学科：PHYSICS, APPLIED	SCIE	Q2	64 / 191	66.75

Ieee Transactions On Electron Devices历年数据统计

影响因子

中科院分区

Ieee Transactions On Electron Devices中国学者发文选摘

1、A Lightweight Design of True Random Number Generator Based on Superparamagnetic Tunnel Junctio
Author: Wang, You; Zhang, Chaoyue; Xu, Yefan; Gong, Yu; Peng, Shouzhong; Zhang, Yue; Cui, Yijun; Liu, Weiqiang

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 3058-3066. DOI: 10.1109/TED.2026.3675612
2、Mechanistic Study of FS Layer in IGBT: Exploring the Effects of Hydrogen and Phosphorus Implantation on Performanc
Author: Sun, Yameng; Chen, Anning; Liu, Xun; Song, Yifan; Zhou, Yang; Ma, Kun; Liu, Sheng

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2663-2672. DOI: 10.1109/TED.2026.3674820
3、Evaluation and Analysis of the RF Stress on the Current Collapse Effect in Si-Based RF GaN HEMT
Author: Sun, Shaoyu; Yin, Zhizhen; Song, Shengxing; Ru, Zhanqiang; Song, Helun

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2557-2565. DOI: 10.1109/TED.2026.3675630
4、Demonstration of 8-kV SiC Gate Turn-Off Thyristors With High di/dt for Nanosecond Pulse Fast-Switching Application
Author: Li, Lingfeng; Li, Juntao; Li, Lianghui; Liao, Zhengxiang; Xu, Xingliang; Zhang, Lin; Meng, Yinghao; He, Yingjiang; Li, Zhiqiang

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2673-2679. DOI: 10.1109/TED.2026.3674876
5、Analytical Model of Charge Transfer in Vertical Pinned Photodiode With Planar Transfer Gate for CMOS Image Sensor
Author: Li, Jingmin; Chen, Quanmin; Xu, Jiangtao

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2600-2608. DOI: 10.1109/TED.2026.3674890
6、A Vertical Top-Gate Multichannel Vacuum Triode With Low Subthreshold Swin
Author: Tang, Wenhua; Li, Zhihao; Chen, Kerun; Xia, Zhangcong; Li, Jie; Shen, Zhihua; Liu, Yiwei; Wang, Xiao; Niu, Gang; Wu, Shengli

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 3023-3028. DOI: 10.1109/TED.2026.3674880
7、Dual-Gate Architecture-Boosted 800-ppi IGZO ISTFT Array With Super-Nernstian Sensitivity for On-Chip Ion Imaging and Parallel DNA Detectio
Author: Mei, Zikang; Tang, Wei; Li, Jun; Zhou, Kaiyutai; Chen, Ziwen; Peng, Xiao; Jiang, Wei; Guo, Xiaojun

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 3149-3156. DOI: 10.1109/TED.2026.3676451
8、Low-Voltage Solution-Processed Li-Doped CuI Thin-Film Transistors for Neuromorphic Computin
Author: Liu, Junting; Dou, Wei; Liu, Sunwen; Xiang, Rui; Xu, Xiaodong; Chen, Pengfei; Peng, Yuling; Tang, Dongsheng

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES. 2026; Vol. 73, Issue 5, pp. 2846-2851. DOI: 10.1109/TED.2026.3676042